JPH0213827B2 - - Google Patents
Info
- Publication number
- JPH0213827B2 JPH0213827B2 JP54060344A JP6034479A JPH0213827B2 JP H0213827 B2 JPH0213827 B2 JP H0213827B2 JP 54060344 A JP54060344 A JP 54060344A JP 6034479 A JP6034479 A JP 6034479A JP H0213827 B2 JPH0213827 B2 JP H0213827B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- oxide film
- drain
- gate
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6034479A JPS55153370A (en) | 1979-05-18 | 1979-05-18 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6034479A JPS55153370A (en) | 1979-05-18 | 1979-05-18 | Manufacturing method of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55153370A JPS55153370A (en) | 1980-11-29 |
| JPH0213827B2 true JPH0213827B2 (en]) | 1990-04-05 |
Family
ID=13139442
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6034479A Granted JPS55153370A (en) | 1979-05-18 | 1979-05-18 | Manufacturing method of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55153370A (en]) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6130260U (ja) * | 1984-07-26 | 1986-02-24 | 新電元工業株式会社 | 絶縁ゲ−ト型電界効果トランジスタ |
| JPS62150886A (ja) * | 1985-12-25 | 1987-07-04 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5291656A (en) * | 1976-01-28 | 1977-08-02 | Toshiba Corp | Production of semiconductor device |
| JPS52129285A (en) * | 1976-04-21 | 1977-10-29 | Fujitsu Ltd | Production of igfet |
| JPS55118674A (en) * | 1979-03-05 | 1980-09-11 | Nec Corp | Fabricating method of semiconductor device |
-
1979
- 1979-05-18 JP JP6034479A patent/JPS55153370A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55153370A (en) | 1980-11-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0355984B2 (en]) | ||
| JPH05865B2 (en]) | ||
| JPH0213827B2 (en]) | ||
| JP2968078B2 (ja) | Ｍｏｓトランジスタの製造方法 | |
| JPS6237543B2 (en]) | ||
| JPH0127589B2 (en]) | ||
| JPS62285468A (ja) | Ｌｄｄ電界効果トランジスタの製造方法 | |
| JPH05129335A (ja) | 縦型トランジスタの製造方法 | |
| JP3521921B2 (ja) | 半導体装置の製造方法 | |
| JPH0485968A (ja) | Ｍｏｓ型半導体装置およびその製造方法 | |
| JP2511399B2 (ja) | 半導体装置およびその製造方法 | |
| JP2594121B2 (ja) | 半導体装置の製造方法 | |
| JPS6156448A (ja) | 相補型半導体装置の製造方法 | |
| JP2870757B2 (ja) | Ｍｉｓ型トランジスタの製造方法 | |
| JP2531688B2 (ja) | 半導体装置の製造方法 | |
| JPH03171671A (ja) | 半導体装置及びその製造方法 | |
| JPS6211516B2 (en]) | ||
| JPS628028B2 (en]) | ||
| JPH0330307B2 (en]) | ||
| KR0170513B1 (ko) | 모스 트랜지스터 및 그의 제조방법 | |
| JPH05259446A (ja) | 半導体装置の製造方法 | |
| JPH0547982B2 (en]) | ||
| JPS59105367A (ja) | Ｍｏｓ型トランジスタの製造方法 | |
| JPH06188259A (ja) | 半導体装置の製造方法 | |
| JPH04359567A (ja) | 半導体装置およびその製造方法 |